Semiconductor device and manufacturing method thereof
AssigneesNEC Electronics Corporation, Renesas Technology Corp.
InventorsTakeo Matsuki, Kazuyoshi Torii
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Abstract
An object of this invention is to prevent the NBTI degradation which may occur following the recent progress in miniaturization of the semiconductor device. By using a silicon nitride film, in which a concentration of Si—H bonds is not greater than 1×1021 cm−3, at least for a liner film or a second sidewall insulating film, the NBTI lifetime of the p-type MOS FET can be improved to be 1×109 seconds, which secures sufficient lifetime for the semiconductor integrated circuit device.
Claims11
A semiconductor integrated circuit device comprising a Metal Oxide Semiconductor field effect transistor disposed on a semiconductor substrate;
- wherein
- a concentration of Si—H bonds comprised at least in one of a plurality of insulating films which is laid on a gate electrode of said Metal Oxide Semiconductor field effect transistor either directly touching or sandwiching a thin film therebetween is not greater than 1×1021 cm−3.
A method of manufacturing a semiconductor integrated circuit device wherein a Metal Oxide Semiconductor field effect transistor is formed in a region separated by an element isolation region that is formed on a semiconductor substrate;
- which at least comprising:
- forming a gate insulating film in a region separated by said element isolation region;
- forming a gate electrode;
- forming a sidewall silicon nitride film on a lateral face of the gate electrode;
- forming source/drain regions;
- and thereafter
- forming a silicon nitride film;
- wherein
- said sidewall silicon nitride film and said silicon nitride film are formed in such a way that a concentration of Si—H bonds in at least one of said silicon nitride films is not greater than 1×1021 cm−3.
A method of manufacturing a semiconductor integrated circuit device according to claim 11, wherein said annealing is carried out either after the formation of said silicon film but before the formation of said gate electrode or after the formation of said gate electrode.
Dependencies are inferred from the claim text.