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US 2006/0214196 A1Published application
Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
OwnerAdam Saxlerinventor
Life of this patent
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Abstract
Transistors and/or methods of fabricating transistors that include a source contact, drain contact and gate contact are provided. In some embodiments, a channel region is provided between the source and drain contacts and at least a portion of the channel regions includes a hybrid layer comprising semiconductor material. In particular embodiments of the present invention, the transistor is a current aperture transistor. The channel region may include pendeo-epitaxial layers or epitaxial laterally overgrown layers. Transistors and methods of fabricating current aperture transistors that include a trench that extends through the channel and barrier layers and includes semiconductor material therein are also provided.
Claims40
A transistor comprising:
- a mask region on a substrate;
- a first epitaxial laterally overgrown layer comprising semiconductor material of a first conductivity type on the substrate and at least a portion of the mask region;
- a second epitaxial laterally overgrown layer comprising semiconductor material of a second conductivity type and/or insulating on the first epitaxial laterally overgrown layer comprising semiconductor material and at least a portion of the mask region and that includes spaced apart portions that extend from end surfaces of the portions of the first epitaxial laterally overgrown layer on the mask region that are the first conductivity type;
- a third epitaxial laterally overgrown layer comprising unintentionally doped semiconductor material on the second epitaxial laterally overgrown layer and that includes portions that extend from the spaced apart portions and coalesce and are the first conductivity type;
- a channel layer comprising semiconductor material on the third epitaxial laterally overgrown layer;
- a barrier layer on the channel layer;
- a source contact on the barrier layer;
- a gate contact on the barrier layer;
- and
- a drain contact electrically connected to the first layer comprising semiconductor material.
7 more elements
A current aperture transistor comprising:
- a first layer comprising semiconductor material of a second conductivity type or insulating on a substrate;
- a channel layer comprising semiconductor material on the second layer;
- a barrier layer on the channel layer;
- a trench extending through the barrier layer, the channel layer and the first layer, the trench including semiconductor material of a first conductivity type therein;
- a gate contact on the barrier layer;
- a source contact on the barrier layer and opposite the trench from the gate contact;
- and
- a drain contact electrically connected to the first layer.
5 more elements
A method of fabricating a transistor comprising:
- forming a mask region on a substrate;
- forming a first epitaxial laterally overgrown layer comprising semiconductor material of a first conductivity type by epitaxial lateral overgrowth on the first layer comprising semiconductor material and at least a portion of the mask region;
- forming a second epitaxial laterally overgrown layer comprising semiconductor material of a second conductivity type and/or insulating by epitaxial lateral overgrowth on the first epitaxial laterally overgrown layer comprising semiconductor material and at least a portion of the mask region and that includes spaced apart portions that extend from end surfaces of the portions of the first epitaxial laterally overgrown layer on the mask region that are the first conductivity type;
- forming a third epitaxial laterally overgrown layer comprising unintentionally doped semiconductor material by epitaxial lateral overgrowth on the second epitaxial laterally overgrown layer and that includes portions that extend from the spaced apart portions and coalesce and are the first conductivity type;
- forming a channel layer comprising semiconductor material on the third epitaxial laterally overgrown layer;
- forming a barrier layer on the channel layer;
- forming a source contact on the barrier layer;
- forming a gate contact on the barrier layer;
- and
- forming a drain contact electrically connected to the first layer comprising semiconductor material.
7 more elements
A method of fabricating a current aperture transistor comprising:
- forming a first layer comprising semiconductor material of a second conductivity type or insulating on a substrate;
- forming a channel layer comprising semiconductor material on the second layer;
- forming a barrier layer on the channel layer;
- forming a trench extending through the barrier layer, the channel layer and the first layer,
- forming a region of semiconductor material of the first conductivity type in the trench;
- forming a gate contact on the barrier layer;
- forming a source contact on the barrier layer and opposite the trench from the gate contact;
- and
- forming a drain contact electrically connected to the first layer.
6 more elements
Dependencies are inferred from the claim text.