Solid-state imaging device
AssigneeFujitsu Limited
InventorsHiroshi Kobayashi, Katsuyoshi Yamamoto, Tadao Inoue, Toshitaka Mizuguchi
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Abstract
A solid-state imaging device has a substrate in which are formed a pixel array portion having a plurality of pixels, and a peripheral circuitry portion. The device is characterized in that a first multilevel metallization structure is formed over the peripheral circuitry portion, and a second multilevel metallization structure thinner than the first multilevel metallization structure is formed over the pixel array portion.
Claims10
A solid-state imaging device comprising:
- a substrate in which are formed a pixel array portion having a plurality of pixels, and a peripheral circuitry portion peripheral to the pixel array portion;
- a first multilevel metallization structure formed over the peripheral circuitry portion;
- and
- a second multilevel metallization structure thinner than the first multilevel metallization structure formed over the pixel array portion.
A solid-state imaging device comprising:
- a substrate in which are formed a pixel array portion having a plurality of pixels, and a periphery circuitry portion peripheral to the pixel array portion;
- a first multilevel metallization structure which is formed over the peripheral circuitry portion and has a plurality of connection layers;
- and
- a second multilevel metallization structure which is formed over the pixel array portion and has a smaller number of connection layers than the first multilevel metallization structure.
A solid-state imaging device comprising:
- a substrate in which are formed a pixel array portion having a plurality of pixels, and a periphery circuitry portion peripheral to the pixel array portion;
- a first multilevel metallization structure which is formed over the peripheral circuitry portion and has a plurality of connection layers;
- and
- a second multilevel metallization structure which is formed over the pixel array portion and has a smaller number of connection layers than the first multilevel metallization structure, over which a color filter film is formed at a level corresponding to the uppermost level of the first multilevel metallization structure.
A method for fabricating a solid-state imaging device with a substrate in which are formed a pixel array portion having a plurality of pixels, and a periphery circuitry portion peripheral to the pixel array portion, the method comprising the steps of:
- forming on a surface of the substrate a multilevel metallization structure which has, over the peripheral circuitry portion, a lower multilevel metallization, an upper multilevel metallization and interlayer dielectric layers for each, and which has, over the pixel array portion, the lower multilevel metallization and its interlayer dielectric layers and also the interlayer dielectric layers of the upper multilevel metallization;
- removing the interlayer dielectric layers of the upper multilevel metallization formed over the pixel array portion;
- and
- forming, on the lower multilevel metallization over the pixel array portion, optical color filters for the pixels.
Dependencies are inferred from the claim text.