Field effect transistor, electrical device array and method for manufacturing those

An electrical element array, comprising:

• a substrate;
• and
• a n-type field effect transistor and a p-type field effect transistor that are formed on the substrate,
• wherein the n-type field effect transistor, comprising:
• a gate electrode formed on the substrate;
• a gate insulation layer formed on the gate electrode:
• a source electrode and a drain electrode that are formed on the gate insulation layer;
• a n-type semiconductor layer comprising carbon nanotube, formed between the source electrode and the drain electrode so as to contact with the source electrode and the drain electrode;
• and
• a n-type modifying polymer layer formed on the n-type semiconductor layer, the n-type modifying polymer layer being for converting a polarity of the carbon nanotube from an original polarity of p-type into n-type and for stabilizing the polarity,
• wherein the p-type field effect transistor, comprising:
• a gate electrode formed on the substrate;
• a gate insulation layer formed on the gate electrode:
• a source electrode and a drain electrode that are formed on the gate insulation layer;
• and
• a p-type semiconductor layer comprising carbon nanotube, formed between the source electrode and the drain electrode so as to contact with the source electrode and the drain electrode.

A method for manufacturing a field effect transistor, comprising the steps of:

• forming a gate electrode on a substrate;
• forming a gate insulation layer on the gate electrode;
• forming a source electrode and a drain electrode on the gate insulation layer;
• forming a semiconductor layer comprising carbon nanotube on the gate insulation layer and between the source electrode and the drain electrode;
• and
• forming a n-type modifying polymer layer on the semiconductor layer by dispensing with an ink-jet method, the n-type modifying polymer layer being for converting a polarity of the carbon nanotube from an original polarity of p-type into n-type and for stabilizing the polarity.

A method for manufacturing an electrical element array including a n-type field effect transistor and a p-type field effect transistor on a substrate, comprising the steps of:

• forming a gate electrode on a substrate;
• forming a gate insulation layer on the gate electrode;
• forming a source electrode and a drain electrode on the gate insulation layer;
• forming a semiconductor layer comprising carbon nanotube on the gate insulation layer and between the source electrode and the drain electrode;
• and
• forming a n-type modifying polymer layer only on a part of the semiconductor layer that should be converted into n-type by dispensing in an ink-jet method, the n-type modifying polymer layer being for converting a polarity of the carbon nanotube from an original polarity of p-type into n-type and for stabilizing the polarity.