Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorTakaharu Nishimura
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AssigneeKabushiki Kaisha Toshiba
InventorTakaharu Nishimura
Estimating the term…
A semiconductor device includes a plurality of wirings disposed in parallel to each other and an insulating layer covering the wirings so that a void is defined between the wirings. Each wiring includes a metal wiring layer having a first side and a second side opposed to the first side, a first barrier metal layer having a third side in contact with the first layer and a fourth layer opposed to the third layer, and a second barrier metal layer having a fifth side in contact with the second side and a sixth side opposed to the fifth side. At least a part of the void is formed so as to be located nearer to the fourth side than an interface between the first and third sides and so as to be located nearer to the sixth side than an interface between the second and fifth sides. The void has a larger sectional area than the metal wiring layer.
A semiconductor device comprising:
A method of manufacturing a semiconductor device comprising:
Dependencies are inferred from the claim text.