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US 2006/0214185 A1Published application
Horizontal tram
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorsJia Zhen Zheng, Weining Li, Tze Ho Simon Chan, Pradeep Yelehanka
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Abstract
An integrated circuit structure includes providing a semiconductor substrate and forming a trench therein. A thyristor is formed around the trench and within the semiconductor substrate. The thyristor has at least four layers with three P-N junctions therebetween. A gate for the thyristor is formed within the trench. An access transistor is formed on the semiconductor substrate. An interconnect is formed between the thyristor and the access transistor.
Claims10
An integrated circuit structure comprising:
- a semiconductor substrate;
- a trench in the semiconductor substrate;
- a thyristor around the trench and within the semiconductor substrate, the thyristor having at least four layers with three P-N junctions therebetween;
- a gate for the thyristor within the trench;
- an access transistor on the semiconductor substrate;
- and
- an interconnect between the thyristor and the access transistor.
4 more elements
An integrated circuit structure comprising:
- a semiconductor substrate;
- a first well in the semiconductor substrate;
- a second well in the semiconductor substrate extending across at least a portion of the first well;
- a first shallow trench isolation extending both inside and outside the first well;
- a second shallow trench isolation in both the first well and the second well;
- a thyristor within the semiconductor substrate and around the second shallow trench isolation, the thyristor having at least four layers with three P-N junctions therebetween;
- a gate for the thyristor within the second shallow trench isolation;
- an access transistor on the semiconductor substrate adjacent the first shallow trench isolation and outside the first well, the access transistor including an access transistor gate formed above the semiconductor substrate;
- and
- an interconnect between the thyristor and the access transistor whereby a horizontal TRAM is provided.
7 more elements
Dependencies are inferred from the claim text.