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US 2006/0214184 A1Published application
Process for forming a planar diode using one mask
AssigneeVishay General Semiconductor LLC
InventorsBenson Wang, Kevin Lu, Warren Chiang, Max Chen
Life of this patent
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Abstract
A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through which dopants are diffused. The substrate is given a Ni/Au plating to provide ohmic contact surfaces, and the oxide on the periphery of the window is coated with a polyimide passivating agent overlying the P/N junction.
Claims15
A diode comprising:
- (a) a substrate of a first conductivity type and a doped region of a second conductivity type defining a P/N junction therebetween;
- (b) nickel plating on the underside of the substrate and along a central portion of a top side of the substrate overlying the doped region of the second conductivity type;
- (c) an oxide coating on the peripheral portion of the top side of the substrate adjacent the central portion;
- and
- (d) a coating of a passivating material along the oxide on the top side of the substrate, the passivating material extending partially over the P/N junction.
2 more elements
A diode comprising:
- (a) a substrate of a first conductivity type and a doped region of a second conductivity type;
- (b) metal plating on the underside of the substrate and along a central portion of the top side of the substrate which corresponds to the doped region of the second conductivity type;
- and
- (c) a coating of a passivating material on top of the oxide on the top side of the substrate, the passivating material extending partially over the doped region.
1 more element
A method of forming a planar diode comprising:
- providing a substrate of a first conductivity type;
- depositing a layer of oxide over the substrate;
- using a mask to expose the central portion of the oxide layer for etching;
- removing the central portion of the oxide via etching;
- diffusing dopants into the substrate via window diffusion to form a region having a second conductivity type;
- plating a metal onto the window and on the opposite side of the substrate;
- and
- coating the remaining oxide and a portion of the plating on a side of the substrate with a passivating agent.
5 more elements
A method of forming a planar diode comprising:
- providing a substrate of a first conductivity type;
- depositing a layer of oxide over the substrate;
- using a mask to expose a selected portion of the oxide layer for etching;
- diffusing dopants into the substrate via window diffusion;
- plating nickel onto the window and on the opposite side of the substrate;
- removing the oxide;
- and
- coating a portion of the substrate and a portion of the plating on a side of the substrate with a passivating agent.
5 more elements
Dependencies are inferred from the claim text.