Ohmic electrode structure, compound semiconductor light emitting device having the same and led lamp
AssigneeShowa Denko K.K.
InventorTakashi Udagawa
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Abstract
An Ohmic electrode structure comprising a p-conductivity-type boron phosphide-based semiconductor layer containing boron and phosphorus as constitutional elements and having a surface; and an electrode disposed on said surface of said semiconductor layer and having an Ohmic contact with said semiconductor layer, wherein at least a surface portion of said electrode which is in contact with said semiconductor layer is formed from a lanthanide element or a lanthanide element-containing alloy. A compound semiconductor light-emitting device comprising a light-emitting layer formed of a compound semiconductor may advantageously comprise the Ohmic electrode structure
Claims19
An Ohmic electrode structure comprising:
- a p-conductivity-type boron phosphide-based semiconductor layer containing boron and phosphorus as constitutional elements and having a surface;
- and
- an electrode disposed on said surface of said semiconductor layer and having an Ohmic contact with said semiconductor layer, wherein at least a surface portion of said electrode which is in contact with said semiconductor layer is formed from a lanthanide element or a lanthanide element-containing alloy.
A compound semiconductor light-emitting device comprising:
- a crystalline substrate formed of an insulating or conductive crystal;
- a light-emitting layer formed of a compound semiconductor formed on said crystalline substrate;
- a p-conductivity-type boron phosphide-based semiconductor layer containing boron and phosphorus as constitutional elements and formed on said light-emitting layer, said p-conductivity-type boron phosphide-based semiconductor layer having a surface;
- and
- a p-conductivity-type Ohmic electrode formed in contact with, and having an Ohmic contact with, said surface of said p-conductivity-type boron phosphide-based semiconductor layer,
- wherein at least a surface portion of said p-conductivity-type Ohmic electrode which is in contact with said surface of said p-conductivity-type boron phosphide-based semiconductor layer is formed from a lanthanide element or a lanthanide element-containing alloy.
Dependencies are inferred from the claim text.