Semiconductor light-emitting element and light-emitting device

A light-emitting device, comprising:

• a mount substrate which has a heat sink;
• and
• a semiconductor light-emitting element mounted on the heat sink,
• the semiconductor light-emitting element comprising:
• a laminated section which has an active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor;
• a pair of first high-reflection layers each being disposed to sandwich the active layer in a first direction orthogonal to the laminated direction of the laminated section, which have high reflectance relative to a light emitted by the active layer;
• and
• a low-reflection layer and a second high-reflection layer each being disposed to sandwich the active layer in a second direction orthogonal to the laminated direction and crossing to the first direction, which have low reflectance and high reflectance respectively relative to the light emitted by the active layer,
• the laminated direction of the laminated section being in parallel to a surface of the heat sink on which the semiconductor light-emitting element is disposed.

A method of fabricating a semiconductor light-emitting device, comprising:

• forming on a semiconductor substrate a laminated section which has a active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor;
• forming a plurality of resist patterns of the same size on an upper surface of the laminated section;
• performing a first cleavage in a direction that electrodes or openings of an insulator formed by using the resist patterns are disposed, along a first direction corresponding to a direction of cleavage of the semiconductor substrate;
• forming a pair of first high-reflection layers which have high reflectance relative to a light emitted by the active layer on two opposite surfaces obtained by the first cleavage;
• performing a second cleavage between two adjacent electrodes or two adjacent openings of the insulator, along a second direction crossing to the first direction;
• and
• forming a low-reflection layer and a second high-reflection layer which have low reflectance and high reflectance respectively relative to the light emitted by the active layer on two opposite surfaces obtained by the second cleavage.

A method of fabricating a semiconductor light-emitting device, comprising:

• forming on a semiconductor substrate a laminated section which has a active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor;
• forming a plurality of resist patterns of the same size on an upper surface of the laminated section;
• performing a first cleavage in a direction that electrodes or openings of an insulator formed by using the resist patterns are disposed, along a first direction corresponding to a direction of cleavage of the semiconductor substrate;
• forming a low-reflection layer and a first high-reflection layer which have low reflectance and high reflectance respectively relative to the light emitted by the active layer on two opposite surfaces obtained by the first cleavage;
• performing a second cleavage between two adjacent electrodes or two adjacent openings of the insulator, along a second direction crossing to the first direction;
• and
• forming a pair of second high-reflection layers which have high reflectance relative to the light emitted by the active layer on two opposite surfaces obtained by the second cleavage.