Photoelectric conversion layer stack type color solid-state image sensing device
AssigneeFuji Photo Film Co., Ltd.
InventorNobuo Suzuki
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Abstract
A color solid-state image sensing device comprising unit cells arranged two-dimensionally in a surface of a silicon substrate, each unit cell including a blue pixel provided as defined herein, a red pixel as defined herein and a green pixel as defined herein, wherein the relation P≧W holds when W is a distance between the position of the center of gravity in a sensitivity distribution of the green pixel and the position of the center of gravity in a sensitivity distribution of the red pixel, and P is a pitch of arrangement of the unit cells.
Claims12
A color solid-state image sensing device comprising unit cells arranged two-dimensionally in a surface of a silicon substrate, each unit cell including a blue pixel for detecting blue light, a red pixel for detecting red light, and a green pixel for detecting green light, the blue pixel being provided as a photodiode formed in the surface of the silicon substrate, the red pixel being provided as a photodiode formed under the blue pixel, the green pixel being provided as a photoelectric conversion layer stacked above the silicon substrate so as to be interposed between a corresponding part of a pixel electrode layer partitioned into parts in accordance with the pixels and a common electrode layer, the blue pixel, the red pixel and the green pixel being arranged in a direction perpendicular to the surface of the silicon substrate, wherein the relation P≧W holds when W is a distance between the position of the center of gravity in a sensitivity distribution of the green pixel and the position of the center of gravity in a sensitivity distribution of the red pixel, and P is a pitch of arrangement of the unit cells.
A color solid-state image sensing device comprising unit cells arranged two-dimensionally in a surface of a silicon substrate, each unit cell including a blue pixel for detecting blue light, a red pixel for detecting red light, and a green pixel for detecting green light, the blue pixel being provided as a photodiode formed in the surface of the silicon substrate, the red pixel being provided as a photodiode formed under the blue pixel, the green pixel being provided as a photoelectric conversion layer stacked above the silicon substrate so as to be interposed between a corresponding part of a pixel electrode layer partitioned into parts in accordance with the pixels and a common electrode layer, wherein as the position of each of the unit cells arranged two-dimensionally becomes farther from the center of a photo acceptance portion of the image sensing device, the position of the green pixel formed in the unit cell is shifted toward the center of the photo acceptance portion of the image sensing device by a predetermined shift quantity relative to the position of the red pixel formed in the unit cell.
Dependencies are inferred from the claim text.