Semiconductor device and manufacturing method thereof

A semiconductor device comprising:

• a gate electrode;
• a first organic semiconductor layer adjacent to the gate electrode through a gate insulating layer;
• and
• a second organic semiconductor layer adjacent to the first organic semiconductor layer,
• wherein the second organic semiconductor layer has a crystal grain larger than that of the first organic semiconductor layer.

A semiconductor device comprising:

• a gate electrode;
• a first organic semiconductor layer adjacent to the gate electrode through a gate insulating layer;
• and
• a second organic semiconductor layer adjacent to the first organic semiconductor layer,
• wherein the first organic semiconductor layer comprises one of polycrystalline and amorphous, and
• wherein the second organic semiconductor layer comprises single crystalline.

A semiconductor device comprising:

• a gate electrode;
• a first organic semiconductor layer adjacent to the gate electrode through a gate insulating layer;
• and
• a second organic semiconductor layer adjacent to the first organic semiconductor layer,
• wherein the first organic semiconductor layer comprises amorphous, and
• wherein the second organic semiconductor layer comprises polycrystalline.

A semiconductor device comprising:

• a gate electrode;
• a first organic semiconductor layer adjacent to the gate electrode through a gate insulating layer;
• and
• a second organic semiconductor layer adjacent to the first organic semiconductor layer,
• wherein the first organic semiconductor layer comprises single crystalline, and
• wherein the second organic semiconductor layer comprises single crystalline including a material different from the first organic semiconductor layer.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a gate electrode and a gate insulating layer over a substrate;
• forming a first organic semiconductor layer adjacent to the gate electrode through the gate insulating layer, and
• forming a second organic semiconductor layer adjacent to the first organic semiconductor layer,
• wherein the second organic semiconductor layer is formed to have a crystal grain larger than that of the first organic semiconductor layer.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a gate electrode and a gate insulating layer over a substrate;
• forming a first organic semiconductor layer adjacent to the gate electrode through the gate insulating layer, and
• forming a second organic semiconductor layer adjacent to the first organic semiconductor layer,
• wherein the second organic semiconductor layer is formed to have crystallinity higher than that of the first organic semiconductor layer.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a gate electrode and a gate insulating layer over a substrate;
• forming a first organic semiconductor layer adjacent to the gate electrode through the gate insulating layer, and
• forming a second organic semiconductor layer adjacent to the first organic semiconductor layer,
• wherein the first organic semiconductor layer comprises one of polycrystalline and amorphous, and
• wherein the second organic semiconductor layer comprises single crystalline.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a gate electrode and a gate insulating layer over a substrate;
• forming a first organic semiconductor layer adjacent to the gate electrode through the gate insulating layer, and
• forming a second organic semiconductor layer adjacent to the first organic semiconductor layer,
• wherein the first organic semiconductor layer comprises amorphous, and
• wherein the second organic semiconductor layer comprises polycrystalline.