Fully integrated organic layered processes for making plastic electronics based on conductive polymers and semiconductor nanowires
AssigneeNanosys, Inc.
InventorsYaoling Pan, Francisco Leon, David Stumbo
Life of this patent
Estimating the term…
Loading patent…
AssigneeNanosys, Inc.
InventorsYaoling Pan, Francisco Leon, David Stumbo
Estimating the term…
The present invention is directed to thin film transistors using nanowires (or other nanostructures such as nanoribbons, nanotubes and the like) incorporated in and/or disposed proximal to conductive polymer layer(s), and production scalable methods to produce such transistors. In particular, a composite material comprising a conductive polymeric material such as polyaniline (PANI) or polypyrrole (PPY) and one or more nanowires incorporated therein is disclosed. Several nanowire-TFT fabrication methods are also provided which in one exemplary embodiment includes providing a device substrate; depositing a first conductive polymer material layer on the device substrate; defining one or more gate contact regions in the conductive polymer layer; depositing a plurality of nanowires over the conductive polymer layer at a sufficient density of nanowires to achieve an operational current level; depositing a second conductive polymer material layer on the plurality of nanowires; and forming source and drain contact regions in the second conductive polymer material layer to thereby provide electrical connectivity to the plurality of nanowires, whereby the nanowires form a channel having a length between respective ones of the source and drain regions.
A composite material comprising a conductive polymeric material and one or more nanowires incorporated therein.
A transistor device comprising:
A process for making a transistor device, comprising:
A process for making a transistor device, comprising:
A process for making a transistor device, comprising:
Dependencies are inferred from the claim text.