Compound with indolocarbazole moieties and devices containing such compound

An electronic device comprising:

• a substrate;
• an electrically conductive layer or a dielectric layer, or both the electrically conductive layer and the dielectric layer;
• and
• a semiconductor layer comprising a compound comprising a plurality of optionally substituted indolocarbazole moieties which are the same or different from each other.

A thin film transistor comprising:

• (a) a gate dielectric layer;
• (b) a gate electrode;
• (c) a semiconductor layer;
• (d) a source electrode;
• and
• (e) a drain electrode,
• wherein the gate dielectric layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the gate dielectric layer, and the source electrode and the drain electrode both contact the semiconductor layer, and
• wherein the semiconductor layer includes a compound comprising a plurality of optionally substituted indolocarbazole moieties, which are the same or different from each other, wherein the indolocarbazole moieties are independently selected from the structures (A), (B), (C), (D), (E), (F) and (G), or a mixture thereof:
• wherein for each of the structures (A) through (G), each R is independently selected from a group consisting of a hydrogen, a hydrocarbon group and a heteroatom-containing group, wherein each of the structures (A) through (G) is optionally peripherally substituted.