Polymeric gate dielectrics for organic thin film transistors and methods of making the same

An article comprising, in a thin film transistor, a thin film of organic semiconductor material wherein the thin film transistor is a field effect transistor comprising a multi-layer dielectric, a gate electrode, a source electrode, and a drain electrode, and wherein the multi-layer dielectric, the gate electrode, the thin film of organic semiconductor material, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the film of organic semiconductor material both contact the multi-layer dielectric, and the source electrode and the drain electrode both contact the thin film of the organic semiconductor material, wherein the multilayer dielectric comprises a first dielectric layer having a thickness of 100 to 500 nm, in contact with the gate electrode and a second dielectric layer having a thickness of 5 nm to 50 nm in contact with the organic semiconductor material, and wherein the first dielectric layer comprises a continuous first polymeric material having a relatively higher dielectric constant less than 10.0 and the second dielectric layer comprises a continuous second non-fluorinated polymeric material having a relatively lower dielectric constant of greater than 2.3, wherein the difference in the dielectric constants is at least 0.2.