Epoxy resin molding material for sealing use and semiconductor device
AssigneeHitachi Chemical Company, Ltd.
InventorsRyoichi Ikezawa, Naoki Nara, Hideyuki Chaki, Yoshihiro Mizukami, Yoshinori Endou, Takaki Kashihara, Fumio Furusawa, Masaki Yoshii, Shinsuke Hagiwara, Mitsuo Katayose
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Abstract
1. An encapsulating epoxy resin molding material, comprising (A) an epoxy resin, (B) a curing agent, and (C) an inorganic filler, wherein the inorganic filler (C) has an average particle size of 12 μm or less and a specific surface area of 3.0 m2/g or more.
Claims35
An encapsulating epoxy resin molding material, comprising (A) an epoxy resin, (B) a curing agent, and (C) an inorganic filler,
- wherein the inorganic filler (C) has an average particle size of 12 μm or less and a specific surface area of 3.0 m2/g or more.
An encapsulating epoxy resin molding material, comprising (A) an epoxy resin, (B) a curing agent, and (C) an inorganic filler,
- wherein the inorganic filler (C) comprises 5% or more by weight of an inorganic filler having a maximum particle size of 63 μm or less and particle sizes of 20 μm or more.
An encapsulating epoxy resin molding material, comprising (A) an epoxy resin, (B) a curing agent, and (C) an inorganic filler,
- the inorganic filler (C) having an average particle size of 15 μm or less and a specific surface area of 3.0 to 6.0 m2/g, and the molding material used in a semiconductor device having one or more of the following structures (a1) to (d1):
- (a1) a structure wherein a bump height of a flip chip is 150 μm or less,
- (b1) a structure wherein a bump pitch of the flip chip is 500 μm or less,
- (c1) a structure wherein an area of a semiconductor chip is 25 mm2 or more, and
- (d1) a structure wherein a thickness of a package, in which the semiconductor chip is disposed on a mounting substrate, is 2 mm or less.
An encapsulating epoxy resin molding material, comprising (A) an epoxy resin, (B) a curing agent, and (C) an inorganic filler, and satisfying at least one of the following conditions:
- the glass transition temperature based on TMA method is 150° C. or higher;
- the bending modulus based on JIS-K 6911 is 19 GPa or less;
- and the mold shrinkage ratio based on JIS-K 6911 is 0.2% or less.
A semiconductor device encapsulated by an encapsulating epoxy resin molding material comprising (A) an epoxy resin, (B) a curing agent, and (C) an inorganic filler.
Dependencies are inferred from the claim text.