Charged beam exposure apparatus, charged beam exposure method, method of manufacturing mask, and method of manufacturing semiconductor device

A charged beam exposure method using a charged beam exposure apparatus comprising a charged beam radiating unit configured to radiate a charged beam;

• a shaping unit including an opening for shaping the charged beam;
• and a deflecting unit configured to irradiate the charged beam onto a desired position on a sample by deflecting the charged beam which has passed through the opening of the shaping unit, the method comprising:
• storing a history of data concerning a beam area of the charged beam on the shaping unit;
• calculating an average value of the beam area of the charged beam on the shaping unit in a given period of time based on the stored history of the data concerning the beam area of the charged beam;
• a predicting unit configured to predict at least one of change amount of dimensions of the charged beam passing through the opening to design dimensions of the opening and change amount of an irradiation position of the charged beam on the sample which are corresponding to the average value calculated by the calculating unit, the predicting the at least one of change amounts being carried out based on at least one of a relation between the beam area of the charged beam on the shaping unit previously prepared and change amount of the dimensions of the charged beam passing through the opening to the design dimensions of the opening for shaping the charged beam, and a relation between the beam area of the charged beam on the shaping unit previously prepared and change amount of the irradiation position of the charged beam on the sample;
• and
• correcting the charged beam based on the predicted change amount.

A method of manufacturing a semiconductor device using a charged beam exposure apparatus, the charged beam exposure apparatus comprising a charged beam radiating unit configured to radiate a charged beam;

• a shaping unit including an opening for shaping the charged beam;
• a deflecting unit configured to irradiate the charged beam onto a desired position on a sample by deflecting the charged beam which has passed through the opening of the shaping unit;
• the method of manufacturing the semiconductor device comprising:
• storing a history of data concerning a beam area of the charged beam on the shaping unit;
• calculating an average value of the beam area of the charged beam on the shaping unit in a given period of time based on the stored history of the data concerning the beam area of the charged beam;
• a predicting unit configured to predict at least one of change amount of dimensions of the charged beam passing through the opening to design dimensions of the opening and change amount of an irradiation position of the charged beam on the sample which are corresponding to the average value calculated by the calculating unit, the predicting the at least one of change amounts being carried out based on at least one of a relation between the beam area of the charged beam on the shaping unit previously prepared and change amount of the dimensions of the charged beam passing through the opening to the design dimensions of the opening for shaping the charged beam, and a relation between the beam area of the charged beam on the shaping unit previously prepared and change amount of the irradiation position of the charged beam on the sample;
• and
• correcting the charged beam based on the predicted change amount.