Plasma etching method, plasma etching apparatus, control program and computer storage medium
AssigneeTokyo Electron Limited
InventorsShin Hirotsu, Shuhei Ogawa
Life of this patent
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Abstract
On a surface of a semiconductor wafer W, a SiCN film, a SiCOH film, a TEOS film, an antireflection film, and a resist film (ArF resist) as a mask are formed in turn. A via hole is formed by plasma etching the SiCOH film with a predetermined etching gas comprising a mixed gas, for example, CF4/CH2F2/N2/O2 mixed gas (not containing a rare gas such as an Ar gas). Thereby, the selection ratio between a low dielectric constant insulation film comprising a carbon containing silicon oxide and the resist can be improved. And at the same time, even when the hole has a minute diameter and a high aspect ratio, an inner wall surface of the hole can be formed in a satisfactory state.
Claims19
A plasma etching method for forming a hole by etching a low dielectric constant insulation film comprising a carbon-containing silicon oxide film using a plasma of an etching gas and a resist film as a mask,
- wherein the etching gas is a mixed gas containing a fluorocarbon gas and not containing a rare gas.
A plasma etching method for forming a hole by etching a low dielectric constant insulation film comprising a carbon-containing silicon oxide film using a plasma of an etching gas and a resist film as a mask,
- wherein the etching gas is a gas mixture containing a fluorocarbon gas and not containing an Ar gas.
A plasma etching method for etching a low dielectric constant insulation film comprising a carbon containing silicon oxide film by a plasma of an etching gas using a mask of a resist film exposed with a short wavelength light having a wavelength not more than that of an ArF excimer laser,
- wherein the etching gas a mixed gas containing a fluorocarbon gas, a hydrofluorocarbon gas, an oxygen gas and a nitrogen gas and not containing a rare gas.
A plasma etching method for etching a low dielectric constant insulation film comprising a carbon containing silicon oxide film by a plasma of an etching gas using a mask of a resist film exposed with a short wavelength light having a wavelength not more than that of an ArF excimer laser,
- wherein the etching gas a mixed gas containing a fluorocarbon gas, a hydrofluorocarbon gas, an oxygen gas and a nitrogen gas and not containing an Ar gas.
Dependencies are inferred from the claim text.