Method and device for plasma-etching organic material film

An apparatus for plasma-etching an organic material film formed on a substrate with an inorganic material film used as a mask, comprising:

• a process vessel that contains the substrate;
• parallel plate electrodes disposed in the process vessel, the electrodes being constituted by a support electrode on which the substrate is supported, and a counter electrode that is opposed to the support electrode;
• a process gas supply system that supplies a process gas into the process vessel;
• an evacuating system that evacuates an atmosphere of the process vessel;
• and
• a first high-frequency power source that supplies a high-frequency power for generating plasma to the support electrode;
• wherein
• the first high-frequency power source supplies a high-frequency power of a frequency of 40 MHz or above;
• and
• the process gas supply system supplies a process gas including an ionization accelerating gas that is ionized from a ground state or metastable state with an ionization energy of 10 eV or below and has a maximum ionization cross-section of 2×10−16 cm2 or above, and a molecular gas.

An apparatus for plasma-etching an organic material film formed on a substrate with an inorganic material film used as a mask, comprising:

• a process vessel that contains the substrate;
• parallel plate electrodes disposed in the process vessel, the electrodes being constituted by a support electrode on which the substrate is supported, and a counter electrode that is opposed to the support electrode;
• a process gas supply system that supplies a process gas into the process vessel;
• an evacuating system that evacuates an atmosphere of the process vessel;
• a first high-frequency power source that supplies a high-frequency power for generating plasma to the counter electrode;
• and
• a second high-frequency power source that supplies a high-frequency power for drawing ions to the support electrode;
• wherein
• the first high-frequency power source supplies a high-frequency power of a frequency of 40 MHz or above;
• the second high-frequency power source supplies a high-frequency power of a frequency of 500 kHz to 27 MHz, such that an absolute value of the self-bias voltage of the support electrode is 500 V or below;
• and
• the process gas supply system supplies a process gas including an ionization accelerating gas that is ionized from a ground state or metastable state with an ionization energy of 10 eV or below and has a maximum ionization cross-section of 2×10−16 cm2 or above, and a molecular gas.