Ionized physical vapor deposition (IPVD) process
AssigneeTokyo Electron Limited
InventorFrank Cerio
Life of this patent
Estimating the term…
Abstract
An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang within a vacuum chamber. The iPVD system is operated at low target power and high pressure >50 mT to sputter material from the target. RF energy is coupled into the chamber to form a high density plasma. A small RF bias (less than a few volts) can be applied to aid in enhancing the coverage, especially at the bottom.
Claims34
A method of operating a deposition system to perform a No Net Deposition (NND) process comprising:
- positioning a patterned substrate on a wafer table within a processing chamber;
- establishing a first set of process parameters during a preprocess time, including:
- flowing a process gas into the processing chamber from a gas supply system to the processing chamber, and
- coupling ICP power from an ICP source with an antenna to the processing chamber;
- creating a high density plasma within the processing chamber during an NND processing time by:
- coupling target power from a target power source to a target positioned within the deposition system, and
- substantially simultaneously with the coupling of target power to the target, coupling RF substrate bias power from an RF bias generator to a wafer table in the processing chamber;
- and
- exposing the patterned substrate to the high-density plasma during the NND processing time.
A method of operating a deposition system to perform a No Net Deposition (NND) process comprising:
- coupling target power from a target power source to a target positioned within the deposition system while substantially simultaneously coupling substrate bias power from an RF bias generator to a wafer table in the processing chamber.
Dependencies are inferred from the claim text.