Back to results
US 2006/0213617 A1Published application
Load bearing insulator in vacuum etch chambers
OwnerSteven Finkinventor
Life of this patent
Estimating the term…
Abstract
An upper electrode assembly (UEL) is supported in an insulator in an opening in the top of an etch chamber in which large diameter substrates are processed with a flange of the UEL overlying the chamber wall around the opening with the insulator in between so that the insulator experiences primarily compressive and minimal shear loads. The electrode nonetheless fills the otherwise vacuum space between the UEL and the chamber wall above a shield ring that covers the insulator and portions of the adjacent UEL face and chamber wall.
Claims13
A method of supporting a downwardly facing RF electrode in an opening in the top of a:
- vacuum processing chamber that is configured to process a wafer of at least 200 millimeters in diameter, the opening having a diameter larger than the diameter of the wafer to be processed, the method comprising:
- providing an annular insulator having:
- outer and inner integral portions,
- the outer portion having:
- an outside diameter larger than the diameter of the opening, and
- a downwardly facing support surface, and
- the inner portion:
- extending below the downwardly facing support surface of the outer portion, and
- having:
- an outside diameter smaller than the diameter of the opening,
- an inside diameter larger than that of the wafer to be processed, and
- an upwardly facing support surface;
- providing an upper electrode assembly having:
- a flange at the top thereof that has an outside diameter that is larger than the diameter of the opening, and
- a lower electrode face:
- formed of a material compatible with the process to be performed on the wafer in the chamber, and
- having an outside diameter larger than the diameter of the wafer to be processed;
- providing an electrically non-conductive shield ring having:
- an outside diameter that is greater than the outside diameter of the inner portion of the insulator, and
- an inside diameter that is less than the outside diameter of the lower electrode face of the upper electrode assembly;
- placing the upper electrode assembly and the annular insulator in the opening and securing the shield ring adjacent the lower electrode face such that:
- the downwardly facing support surface of the insulator rests on the top of the chamber around the opening,
- the flange at the top of the upper electrode assembly rests on the upwardly facing support surface of the inner portion of the insulator and compresses the insulator between the flange and the chamber wall,
- the insulator substantially fills the volume between:
- the outside diameter of the lower electrode face and the inside diameter of the opening, and
- the downwardly facing support surface of the insulator and the shield ring;
- and
- coupling an RF power source between the electrode and the chamber.
25 more elements
An insulator for supporting an upper electrode assembly (UEL) in an opening in the top of a processing chamber of a semiconductor wafer etching apparatus, the insulator comprising:
- an annular ring formed at least in part of electrically insulating material and having integral outer and inner portions;
- the inner portion having an inner diameter of greater than 200 millimeters and an upwardly facing electrode supporting surface having an outer diameter to support a UEL thereon;
- the outer portion having a downwardly facing supporting surface having an inner diameter to support the insulator with the UEL supported thereon on a chamber wall around the opening in the top of a chamber, whereby at least a portion of the downwardly facing supporting surface aligns vertically with the upwardly facing supporting surface;
- and
- the inner portion having a lower part configured to extend sufficiently below the top of the chamber to support a shield ring thereon in the processing chamber, the lower part being configured to displace substantially all vacuum space between the UEL and the top of the chamber and between the UEL and the shield ring.
2 more elements
A processing apparatus comprising:
- a vacuum chamber wall portion having an inner diameter defining an opening therein;
- an upper electrode assembly (UEL) having a lower face of a diameter greater than 200 millimeters and less than the inner diameter of the wall portion and having a downwardly facing rim having an outer diameter greater than the inner diameter of the wall portion;
- an insulator supporting the UEL in the opening, the insulator including an annular ring formed at least in part of electrically insulating material;
- at least a portion of the insulator lying between and in vertical alignment with at least a portion of the rim of the UEL and the wall portion;
- an annular shield ring having an outer diameter greater than the inner diameter of the wall portion and an inner diameter less than the diameter of the lower face of the UEL;
- and
- at least a portion of the insulator displacing substantially all vacuum space that is surrounded by the UEL, the chamber wall portion and the shield ring.
4 more elements
Dependencies are inferred from the claim text.