Method of production of multilayer ceramic electronic device

Abstract

A method of production of a multilayer ceramic electronic device having dielectric layers with an interlayer thickness of 5 μm or less and internal electrode layers including a base metal, including the steps of firing, then annealing a stack comprised of a dielectric layer paste and an internal electrode layer paste including a base metal alternately arranged in 100 layers or more under a reducing atmosphere, treating the annealed stack by first heat treatment under a strong reducing atmosphere of an oxygen partial pressure P3 of over 2.9×10−39 Pa to less than 6.7×10−24 Pa at a holding temperature T3 of over 300° C. to less than 600° C. The stack after the first heat treatment is treated by second heat treatment under an atmosphere of an oxygen partial pressure P4 of over 1.9×10−7 Pa to less than 4.1×10−3 Pa at a holding temperature T4 of over 500° C. to less than 1000° C.

Dependencies are inferred from the claim text.