Above room temperature ferromagnetic silicon
AssigneeThe Research Foundation of State University of New York
InventorsVincent LaBella, Martin Bolduc, Chaffra Awo-Affouda, Mengbing Huang
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Abstract
A manganese-implanted silicon substrate exhibits ferromagnetism and a Curie temperature above room temperature when magnetized. The implant is done at a temperature of between about 250 C and about 800 C, while the manganese concentration is between about 0.01 atomic percent and 10 atomic percent. The silicon substrate can be p- or n-type with a doping concentration between 1015 and 1021 cm−3. Annealing may be done to increase the saturation magnetization.
Claims30
A composition, comprising silicon and manganese, wherein when exposed to a magnetic field the composition exhibits ferromagnetism and a Curie temperature above room temperature.
A method of making ferromagnetic silicon, comprising:
- providing a silicon substrate;
- and
- implanting manganese ions into the substrate at a temperature of between about 250 degrees Celsius and about 800 degrees Celsius.
A method of making ferromagnetic silicon, comprising:
- providing a p- or n-type doped silicon wafer;
- placing the silicon wafer in an ion implant machine;
- heating the ion implant machine to a desired implant temperature;
- and
- causing the ion implant machine to implant a predetermined dose of manganese ions into the silicon wafer.
Dependencies are inferred from the claim text.