Thin-film photoelectric conversion device and a method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Yasuyuki Arai
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Abstract
A method of manufacturing a thin-film solar cell, comprising the steps of: forming an amorphous silicon film on a substrate; placing a metal element that accelerates the crystallization of silicon in contact with the surface of the amorphous silicon film; subjecting the amorphous silicon film to a heat treatment to obtain a crystalline silicon film; depositing a silicon film to which phosphorus has been added in contact with the crystalline silicon film; and subjecting the crystalline silicon film and the silicon film to which phosphorus has been added to a heat treatment to getter the metal element from the crystalline film.
Claims33
A thin-film device comprising:
- a semiconductor film formed over a substrate;
- and
- an n-type semiconductor film formed over the semiconductor film, wherein the n-type semiconductor film contains a metal element.
A thin-film device comprising:
- a semiconductor film formed over a substrate, wherein the semiconductor film contains a metal element at a concentration not higher than 5×1018 atoms/cm3;
- and
- an n-type semiconductor film formed over the semiconductor film, wherein the n-type semiconductor film contains the metal element.
A thin-film device comprising:
- a semiconductor film formed over a substrate;
- and
- an n-type semiconductor film formed over the semiconductor film, wherein the n-type semiconductor film contains phosphorus and a metal element.
A thin-film device comprising:
- a semiconductor film formed over a substrate;
- an n-type semiconductor film formed over the semiconductor film, wherein the n-type semiconductor film contains a metal element;
- and
- a transparent electrode formed over the n-type semiconductor film.
A thin-film device comprising:
- a semiconductor film formed over a substrate, wherein the semiconductor film contains a metal element at a concentration not higher than 5×1018 atoms/cm3;
- an n-type semiconductor film formed over the semiconductor film, wherein the n-type semiconductor film contains the metal element;
- and
- a transparent electrode formed over the n-type semiconductor film.
A thin-film device comprising:
- a semiconductor film formed over a substrate;
- an n-type semiconductor film formed over the semiconductor film, wherein the n-type semiconductor film contains phosphorus and a metal element;
- and
- a transparent electrode formed over the n-type semiconductor film.
Dependencies are inferred from the claim text.