Deposition apparatus and deposition method
AssigneesTokyo Electron Limited, Seiji SAMUKAWA
InventorsSeiji Samukawa, Toshihisa Nozawa
Life of this patent
Estimating the term…
Abstract
A deposition apparatus (10) comprises a plasma generation chamber (14) to which a pressure is applied with a treatment gas to generate plasma, a deposition chamber (20) in which a substrate is placed and a film is formed on the substrate, and a distribution plate (17) having a plurality of holes and provided between the plasma generation chamber (14) and the deposition chamber (20). A diameter of the hole in the distribution plate (17) has a size such that a pressure of the plasma generation chamber (14) is 2.0 times or more as high as that of the deposition chamber (20). The deposition apparatus (10) further comprises means for applying a predetermined bias voltage between the plasma generation chamber (14) and the deposition chamber (20).
Claims26
A deposition apparatus comprising:
- a plasma generation chamber to which a predetermined treatment gas is introduced to generate plasma at a predetermined pressure;
- a deposition chamber in which a substrate is placed, and a desired film is formed on said substrate at a predetermined pressure;
- evacuating means connected to said deposition chamber, for evacuating said deposition chamber;
- and
- a distribution plate provided between said plasma generation chamber and said deposition chamber and having a plurality of holes constituted such that a pressure of said plasma generation chamber becomes a positive pressure as compared with a pressure of said deposition chamber.
A deposition apparatus comprising:
- a reaction container;
- means for generating a radical in a plasma generation region using a planar antenna provided at the upper portion of said reaction container;
- setting means provided in said reaction container, for setting a substrate;
- deposition gas supplying means for supplying a predetermined deposition gas to a deposition region on the substrate set on said setting means;
- means for confining said deposition gas in said deposition region;
- and
- deposition controlling means for controlling a deposition component contained in said deposition gas so that the deposition component is continuously polymerized on said substrate using said radical.
A deposition method for forming a desired film on a substrate comprising:
- a step of confining a deposition gas into a deposition region of the substrate;
- and
- a step of continuously polymerizing a deposition component contained in the deposition gas on the substrate using a radical.
A deposition apparatus comprising:
- a plasma generation chamber to which a predetermined treatment gas is introduced to generate plasma;
- a deposition chamber in which a substrate is placed, and a desired film is formed on said substrate with a deposition gas;
- a distribution plate provided between said plasma generation chamber and said deposition chamber and having a plurality of holes, wherein
- said hole of the distribution plate has the size such that the size of said plasma generation chamber side is large and the size of said deposition chamber is small and said treatment gas flows from said plasma generation chamber to said deposition chamber only.
A program making a computer controlling a deposition apparatus execute a deposition method comprising steps of placing a substrate in a deposition chamber, confining a deposition gas in a deposition region of the substrate, and a step of continuously polymerizing a deposition component contained in the deposition gas on the substrate through a radical thereby to form a desired film on the substrate.
Dependencies are inferred from the claim text.