Apparatus and method for controlled application of reactive vapors to produce thin films and coatings

A method for vapor-phase deposition of coatings, where at least one precursor used for formation of said coating exhibits a vapor pressure below about 150 Torr at a temperature of 25° C., the method comprising:

• a) providing a processing chamber in which said coating is vapor deposited;
• b) providing at least one precursor exhibiting a vapor pressure below about 150 Torr at a temperature of 25° C.;
• c) transferring vapor of said precursor to a precursor vapor reservoir in which said precursor vapor accumulates;
• d) accumulating a nominal amount of said precursor vapor required for said vapor phase coating deposition;
• and
• e) adding said nominal amount of said precursor vapor to said processing chamber in which said coating is being deposited.

An apparatus for vapor deposition of thin film coatings, where at least one coating precursor used for formation of said coating exhibits a vapor pressure below about 150 Torr at a temperature of 25° C., the apparatus comprising:

• a) at least one coating precursor delivery system, which precursor delivery system consists essentially of
• 1) a plurality of coating precursor containers into which a coating precursor, in the form of a liquid or a solid, is placed;
• 2) a plurality of coating precursor vapor reservoirs, each in communication with a coating precursor container;
• 3) a plurality of in-line devices which control precursor vapor flow from a precursor container into a precursor vapor reservoir with which said precursor container is in communication;
• 4) at least one process controller, where said process controller is in communication with at least one of said plurality of in-line devices;
• and
• 5) a plurality of precursor vapor reservoir pressure sensors, where each pressure sensor is in communication with a precursor vapor reservoir and with a process controller;
• b) a process chamber for vapor deposition of said coating on a substrate present in said process chamber;
• c) at least one device which controls precursor vapor flow from said at least one coating precursor delivery system upon receipt of a signal from a process controller which is programmed to provide for a single period of vapor flow or intermittent periods of vapor flow from said at least one coating precursor delivery system into said process chamber.