Substrate processing apparatus
AssigneeTadahire Ohmi
InventorsTadahiro Ohmi, Masaki Hirayama
Life of this patent
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Abstract
A substrate processing apparatus (10A) using a microwave plasma is disclosed wherein an inner partition wall (15) is provided within a process chamber (11) so that the inside of the process chamber (11) is divided into a space (11A) where a substrate to be processed is housed and a space (11B) which is defined by the inner partition wall (15) and the outer wall of the process chamber (11). By having such a structure, contamination of the substrate by a gas separated from the sealing material and contamination of the substrate caused by abnormal discharge can be prevented, thereby enabling clean processing of the substrate.
Claims11
A substrate processing apparatus comprising:
- a processing chamber defined by an outer wall and provided with a holding table for holding a processing substrate,
- an exhaust port for exhausting the inside of said processing chamber,
- a microwave transmissive window provided on said processing chamber as part of said outer wall so as to face said processing substrate,
- a microwave antenna provided on said microwave transmissive window and electrically connected to a microwave power supply,
- a plasma gas supply portion for supplying a plasma gas into said processing chamber,
- an inner partition wall formed so as to surround said holding table, and
- a partition wall attaching portion inserted between said processing chamber and said microwave transmissive window to form part of said outer wall and attached with said inner partition wall,
- said inner partition wall dividing a space inside said processing chamber into a first space containing said holding table and a second space defined by said outer wall and said inner partition wall and a gap between said microwave transmissive window and said partition wall attaching portion being exhausted through said second space.
Dependencies are inferred from the claim text.