Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate

A single crystal GaN substrate having a top surface, a bottom surface, a diameter of more than 25 mm (1 inch) and a thickness of more than 120 μm,

• the top surface comprising:
• a planar low dislocation single crystal region (Z) extending in a direction defined on the top surface;
• and
• two planar defect accumulating regions (H) extending in the same direction as the low dislocation single crystal region (Z), having interfaces (K) on both sides and being in contact with the planar low dislocation single crystal regions (Z) via the interfaces (K).

A single crystal GaN substrate having a top surface, a bottom surface, a diameter of more than 25 mm (1 inch) and a thickness of more than 120 μm,

• the single crystal GaN substrate comprising:
• a planar low dislocation single crystal region (Z) extending in both a direction of thickness and a direction defined on the top surface;
• and
• two planar voluminous defect accumulating regions (H) extending in the same directions as the low dislocation single crystal region (Z), having interfaces (K) on both sides and being in contact with the low dislocation single crystal regions (Z) via the interfaces (K).

A single crystal GaN substrate having a top surface a bottom surface, a diameter of more than 25 mm (1 inch) and a thickness of more than 120 μm,

• the top surface comprising:
• parallel linear defect accumulating regions (H) accumulating dislocations and aligning periodically, regularly with a pitch p;
• and
• parallel linear low dislocation single crystal regions (Z) sandwiched between the neighboring linear defect accumulating regions (H) or
• a set (ZYZ) of parallel linear low dislocation single crystal regions (Z) and a C-plane growth region (Y) with higher resistivity than other regions between the neighboring linear defect accumulating regions (H).

A laser diode produced on a single crystal GaN substrate, the single crystal GaN substrate having a top surface, a bottom surface, a diameter of more than 25 mm (1 inch) and a thickness of more than 120 μm,

• the top surface comprising:
• a planar low dislocation single crystal region (Z) extending in a direction defined on the top surface;
• and
• two planar defect accumulating regions (H) extending in the same direction as the low dislocation single crystal region (Z), having interfaces (K) on both sides and being in contact with the planar low dislocation single crystal regions (Z) via the interfaces (K).