Capacitive sensor and a method for manufacturing the capacitive sensor
AssigneeVTI Technologies Oy
InventorsJaakko Ruohio, Risto Mutikainen
Life of this patent
Estimating the term…
Abstract
The present invention relates to measuring devices for use in physical measuring, and in particular to capacitive sensors. In the sensor according to the invention, the shape of the stationary electrode (3), (4), (12), (17-20), (27-28) is stepped. By means of the invention, a method for manufacturing a capacitive sensor with improved linearity is achieved, as well as a capacitive sensor suitable for use particularly in small capacitive sensor solutions.
Claims47
A capacitive sensor comprising a movable electrode, and a stationary electrode, wherein the shape of the stationary electrode is stepped.
A method for manufacturing a capacitive sensor out of a silicon wafer element, wherein a stationary electrode of the capacitive sensor is manufactured in a stepped fashion using thin-film technology such, that
- a metal layer is metallized onto a stationary surface of the capacitive sensor,
- the metal layer is patterned by removing the metal layer elsewhere than in the area of the desired pattern, and
- the metallization and the patterning are repeated at least once such, that a stepped electrode structure is obtained.
Dependencies are inferred from the claim text.