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AssigneeNational Institute of Advanced Industrial Science and Technology
InventorKazuhiro Endo
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A well-crystallized a-axis (or b-axis) oriented Bi-based oxide superconductor thin film is manufactured in order to obtain a high performance layered Josephson junction using a Bi-based oxide superconductor. In manufacturing a well-crystallized a-axis oriented Bi-based oxide superconductor thin film, a (110) plane of a single crystal substrate of LaSrAlO4 or a vicinal cut substrate of a single crystal of LaSrAlO4 is used, on which an a-axis oriented Bi-2223 or Bi-2201 thin film is heteroepitaxially grown at a low film forming temperature T1, then homoepitaxially grown on the grown film at a high film forming temperature T2 (double temperature growth method). Although it is difficult to grow an a-axis oriented film directly on a substrate at a high temperature T2, an a-axis oriented Bi-2223 or Bi-2201 thin film is formed on the base by previously forming the base film at low deposition temperature.
A method of manufacturing an oxide superconductor thin film on a substrate, wherein a lattice constant of a single crystal of said superconductor thin film is an approximate integer multiple of a lattice constant of a single crystal of said substrate, and said thin film is heteroepitaxially grown at a first temperature, then homoepitaxially grown thereon at a second temperature which is higher than said first temperature.
An oxide superconductor thin film deposited on a substrate, wherein a lattice constant of a single crystal of said thin film is an approximately integer times multiple of a lattice constant of a single crystal of said substrate, and which is manufactured such that said thin film is heteroepitaxially grown at a first temperature, then homoepitaxially grown thereon at a second temperature which is higher than said first temperature.
A method of manufacturing an oxide superconductor thin film on a substrate, wherein a lattice constant of a single crystal of said superconductor thin film is an approximately integer multiple of a lattice constant of a single crystal of said substrate, and said substrate is a vicinal substrate.
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