Pattern extracting system, method for extracting measuring points, method for extracting patterns, and computer program product for extracting patterns

A method for extracting measuring points including:

• sampling a plurality of measuring points from a circuit pattern, based on a lithographic process tolerance;
• classifying the plurality of measuring points into a plurality of correction parameter groups depending on a correction parameter, the correction parameter being used to correct the circuit pattern;
• classifying the plurality of measuring points into a plurality of design parameter groups depending on a design parameter, the design parameter being not used to correct the circuit pattern;
• and
• extracting the plurality of measuring points classified into the plurality of correction parameter groups and the plurality of design parameter groups.

A method for extracting patterns including:

• sampling a plurality of test candidate patterns from a circuit pattern, based on a lithographic process tolerance;
• classifying the plurality of test candidate patterns into a plurality of space distance groups depending on a space distance to an adjacent pattern;
• classifying the plurality of test candidate patterns into a plurality of pattern density groups depending on a surrounding pattern density;
• and
• assessing actual measurements of dimensional errors of the plurality of test candidate patterns classified into the plurality of space distance groups and the plurality of pattern density groups.

A computer program product for controlling a computer system so as to extract patterns, the computer program product comprising:

• instructions configured to sample a plurality of test candidate patterns from a circuit pattern, based on a lithographic process tolerance;
• instructions configured to classify the plurality of test candidate patterns into a plurality of space distance groups depending on a space distance to an adjacent pattern;
• instructions configured to classify the plurality of test candidate patterns into a plurality of pattern density groups depending on a surrounding pattern density;
• and
• instructions configured to assess actual measurements of dimensional errors of the plurality of test candidate patterns classified into the plurality of space distance groups and the plurality of pattern density groups.