Multi-band low noise amplifier, multi-band low noise amplifier module, wireless integrated circuit and multi-band RF module

A multi-band low noise amplifier module, comprising:

• a first low noise amplifier connected to a first input impedance matching circuit for positive input signals;
• and
• a second low noise amplifier connected to a second input impedance matching circuit for negative input signals,
• wherein each of said first and second low noise amplifiers includes a multi-band low noise amplifier comprising:
• a pre-stage amplification unit including a plurality of fundamental amplifiers connected to one another in parallel, said fundamental amplifiers sharing a load impedance connected to a source voltage and a grounded degeneration impedance and having input signal lines commonly connected to an input impedance matching circuit;
• and
• a post-stage amplifier to which the output signals of said plurality of fundamental amplifiers are commonly inputted,
• wherein the input impedance of said pre-stage amplification unit is selectively optimized for a plurality of RF bands according to the ways for supplying a bias voltage to said plurality of fundamental amplifiers, and
• wherein said first and second low noise amplifiers output differentially amplified signals relative to differential input signals supplied from said first and second input impedance matching circuits.

A multi-band RF module, comprising:

• a front end circuit for selecting RF bands to be received;
• and
• a semiconductor integrated circuit for RF use, for converting received signals of the RF band selected by the front end circuit into baseband signals,
• wherein said semiconductor integrated circuit for RF use includes a multi-band low noise amplifier for receiving multi-band signals, whose band is selectable by said front end circuit, through an input impedance matching circuit.