Method for fabricating silicon nitride film

Abstract

A method for fabricating a silicon nitride film is disclosed. The method is adapted for a substrate comprising a transistor device. A self-aligned silicide film is formed over the transistor device. A silicon nitride film is then formed over the substrate. A thermal process is performed to the silicon nitride film. The process temperature of the thermal treatment process is lower than 450° C. and the thermal treatment process is performed under an inert gas environment. According to the fabrication method of the present invention, a high tensile stress silicon nitride film can be formed by a process with a low thermal budget. The electron mobility in the channel region of the transistor device can be enhanced without affecting the thermal stability of metal silicide.

Dependencies are inferred from the claim text.