Method for making a semiconductor device having a high-k gate dielectric

A method for making a semiconductor device comprising:

• forming a high-k gate dielectric layer that contacts a metal oxide layer, the high-k gate dielectric layer being formed on a silicon containing substrate;
• wherein the metal oxide layer is generated by forming a metal layer on the high-k dielectric layer, then oxidizing the metal layer, the metal layer being oxidized to generate the metal oxide layer after the metal layer is formed on the high-k dielectric layer;
• and
• wherein a layer of silicon dioxide that is positioned between the high-k gate dielectric layer and the silicon containing substrate is converted to silicon when the metal layer is oxidized to generate a conductive metal oxide layer.

A method for making a semiconductor device comprising:

• forming a metal layer on a silicon containing substrate;
• and
• forming a high-k gate dielectric layer on the metal layer by depositing additional high-k material on top of the metal layer;
• wherein the metal layer is oxidized to generate a metal oxide layer as the high-k gate dielectric layer is formed on the metal layer.

A method for making a semiconductor device comprising:

• forming a high-k gate dielectric layer on a silicon containing substrate, a silicon dioxide layer forming between the high-k gate dielectric layer and the silicon containing substrate as the high-k gate dielectric layer is formed on the silicon containing substrate;
• forming a metal layer on the high-k gate dielectric layer;
• and
• oxidizing the metal layer to generate a metal oxide layer with the high-k dielectric layer between the metal oxide layer and the substrate, the silicon dioxide layer being converted to silicon as the metal layer is oxidized.

A method for making a semiconductor device comprising:

• forming a high-k gate dielectric layer on a silicon containing substrate, a silicon dioxide layer forming between the high-k gate dielectric layer and the silicon containing substrate as the high-k gate dielectric layer is formed on the silicon containing substrate;
• forming a metal layer on the high-k gate dielectric layer, the metal layer being between about 5 angstroms and about 10 angstroms thick, and comprising a material that is selected from the group consisting of titanium, zirconium, hafnium, tantalum, niobium, yttrium, ruthenium, and iridium;
• oxidizing the metal layer to generate a conductive metal oxide layer that comprises a material that is selected from the group consisting of ruthenium oxide and iridium oxide, the silicon dioxide layer being converted to silicon as the metal layer is oxidized;
• and
• wherein the metal oxide layer forms part of a gate electrode stack for a metal gate electrode.