Pattern forming method and semiconductor device manufacturing method

A pattern forming method comprising:

• forming a resist pattern on a to-be-processed film;
• forming a mask pattern including the resist pattern and a resin film formed on a surface of the resist pattern;
• forming a to-be-processed film pattern by etching the to-be-processed film using the mask pattern as a mask;
• and
• slimming the to-be-processed film pattern.

A resist pattern forming method comprising:

• forming a mask film on a to-be-processed film;
• coating a resin solution containing resin on the mask film;
• forming a cross-linked layer and a non-cross-linked layer from the resin solution, the cross-linked layer being formed by causing the resin to cross-link, the non-cross-linked layer mainly comprising the resin that is not cross linked;
• removing the non-cross-linked layer;
• and
• forming a resist pattern on the cross-linked layer.

A resist pattern forming method comprising:

• forming a to-be-processed film on a foundation member;
• forming a resist film on the to-be-processed film;
• forming a latent image pattern in the resist film;
• forming a resist pattern in the resist film by developing the resist film in which the latent image is formed by a first solution that does not dissolve the to-be-processed film;
• coating a resin solution which does not dissolve the to-be-processed film and contains resin on the resist pattern;
• forming a cross-linked layer and a non-cross-linked layer from the resin solution, the cross-linkeed layer being formed by causing the resin to cross-link, the non-cross-linked layer mainly comprising the resin that is not cross linked;
• removing the non-cross-linked layer;
• and
• etching the to-be-processed film between a gap of the resist patterns with the cross-linked layer by a second solution that does not dissolve the cross-linked layer.