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AssigneeLexmark International, Inc.
InventorsJohn Krawczyk, Andrew McNees, Christopher Money, Girish Patil, David Rhine, Karthik Vaideeswaran
Estimating the term…
A process for etching semiconductor substrates using a deep reactive ion etching process to produce through holes or slots (hereinafter “slots”) in the substrates. The process includes applying a first layer to a back side of a substrate as a first etch stop material. The first layer is a relatively soft etch stop material. A second layer is applied to the first layer on the back side of the substrate to provide a composite etch stop layer. The second layer is a relatively hard etch stop material. The substrate is etched from a side opposite the back side of the substrate to provide a slot in the substrate.
A process for etching a semiconductor substrate using a deep reactive ion etching process to produce a slot in the substrate, the process comprising:
In a process for etching slots through a thickness of a semiconductor substrate using a deep reactive ion etching (DRIE) process, the improvement comprising:
Dependencies are inferred from the claim text.