Metal structure with sidewall passivation and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMinghsing Tsai, Yung-Cheng Lu
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Abstract
A passivated metal structure and a method of forming the metal structure is disclosed. According to one embodiment, the patterned metal structure, such as conductive lines, are formed on a substrate. The copper lines are passivated by a polymer liner between the copper lines and a low k dielectric filling the spaces between the conductive lines. The polymer liner is preferably deposited on the sidewalls of the conductive lines by electro-grafting. The polymer liner may also be used in a damascene process according to a second embodiment.
Claims23
A method of passivating sidewalls of a patterned metal structure comprising the steps of:
- providing a substrate;
- forming patterned metal structures on said substrate said patterned metal structures having spaces there between;
- depositing a low k dielectric material over said substrate, said dielectric material filling the spaces between said patterned metal structures;
- and
- providing a protective polymer liner between selective portions of said patterned metal structure and said low k dielectric material.
A semiconductor structure comprising:
- a substrate;
- patterned metal structures formed on said substrate and including spaces between said patterned metal structures;
- a low k dielectric material filling the spaces between the said metal structure;
- and
- a protective polymer liner between said patterned metal substrate and said low k dielectric material.
Dependencies are inferred from the claim text.