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US 2006/0189142 A1Published application
Method for making a sub-micron solid oxide electrolyte membrane
OwnerYuji Saito, Friedrich Prinz +3inventors
InventorsYuji Saito, Friedrich Prinz, Masafumi Nakamura, Hong Huang, Rainer Fasching
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Abstract
This document describes fabrication method for a thin film electrolyte membrane and electrochemical devices including the membrane. As an electrolyte becomes thinner, the conductance of the electrolyte increases. Consequently, the performances of solid-state ionic devices like fuel cells, gas sensors and catalytic supporters, can be improved and operating temperature can be lowered.
Claims35
A method of making a fuel cell comprising:
- a) depositing an electrolyte layer on a substrate;
- b) depositing a first electrode layer on the electrolyte layer;
- c) performing a first etching of a substrate;
- d) depositing a second electrode layer on the electrolyte layer.
1 more element
A method of making a fuel cell comprising:
- depositing an electrolyte layer on a dense substrate;
- and
- etching the dense substrate,
- where the etching exposes a bottom surface of the electrolyte layer.
1 more element
A method of making a solid oxide fuel cell comprising:
- a) starting with a silicon wafer, the wafer coated with silicon nitride on top and bottom surfaces of the wafer;
- b) applying a first layer of photoresist to the bottom surface of the wafer;
- c) exposing and developing the first layer of photoresist with a first pattern;
- d) performing a first etching on the wafer, the first etching removing a portion the bottom silicon nitride layer that corresponds with the first pattern;
- e) removing the first layer of photoresist;
- f) depositing an electrolyte layer on the top silicon nitride layer;
- g) applying a second layer of photoresist on the electrolyte layer;
- h) exposing and developing the second layer of photoresist with a second pattern;
- i) depositing a first electrode layer on a top side of the electrolyte layer;
- j) removing the second layer of photoresist;
- k) performing a second etching on the wafer, the second etching removing a portion the silicon wafer;
- l) performing a third etching on the wafer, the third etching removing a exposed portion of the top silicon nitride layer, the third etching exposing a bottom side of the electrolyte layer;
- and
- m) depositing a second electrode layer on the bottom side of the electrolyte layer.
11 more elements
Dependencies are inferred from the claim text.