Method of forming damascene filament wires and the structure so formed
AssigneeInternational Business Machines Corporation
InventorsBrent Anderson, Andres Bryant, Jeffrey Gambino, Anthony Stamper
Life of this patent
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Abstract
A method of forming a semiconductor device, and the device so formed. Depositing a low dielectric constant material on a substrate. Depositing a hard mask on the low dielectric constant material. Forming an at least one first feature within the low dielectric constant material and the hard mask. Depositing a conformal liner over the hard mask and within the at least one feature, wherein the liner occupies more than at least 2% of a volume of the at least one feature, and wherein a thickness of the liner is at least approximately ⅓ a minimum width of the at least one feature. Metallizing the at least one feature.
Claims27
A method of forming a semiconductor device, comprising:
- providing a substrate;
- depositing a first dielectric layer on the substrate, wherein the first dielectric layer comprises a material having a low dielectric constant;
- depositing a first hard mask on the first dielectric layer;
- forming an at least one first feature within the first dielectric layer and the first hard mask;
- depositing a first conformal liner over the first hard mask and within the at least one first feature, wherin the first conformal liner occupies more than at least 2% of a volume of the at least one first feature;
- depositing a first conductive material over the first conformal liner;
- and
- planarizing a surface of the device to remove excess first conductive material.
A method of forming a semiconductor device, comprising:
- providing a substrate;
- depositing a dielectric layer on the substrate, wherein the dielectric layer comprises a material having a low dielectric constant;
- forming at least one feature within the first layer;
- depositing a conformal liner over a surface of the device and within the at least one feature, wherein a thickness of the conformal liner is at least approximately ⅓ a minimum width of the at least one feature;
- and
- metallizing the at least one feature.
A semiconductor device, comprising:
- a substrate;
- a dielectric layer on a surface of the substrate, wherein the dielectric layer comprises a material having a low dielectric constant;
- a hard mask on the dielectric layer;
- at least one feature within the dielectric layer and the hard mask;
- a conformal liner over the hard mask and within the at least one feature, wherein the conformal liner occupies more than at least 2% of a volume of the at least one feature;
- and
- a conductive material within the at least one feature.
Dependencies are inferred from the claim text.