Trench interconnect structure and formation method

A method of forming a vertical interconnect structure within a semiconductor device, the method comprising:

• forming an opening extending vertically downward through an insulating layer to an underlying portion of a first metal layer;
• depositing a coating layer of a conductive material in contact with a bottom and sidewalls of the opening;
• depositing a first conductive layer containing aluminum into the opening and in contact with the coating layer at a first temperature;
• and
• depositing a second conductive layer containing aluminum into the opening and in contact with the first conductive layer at a second temperature that is higher than the first temperature, wherein the coating layer, the first conductive layer, and the second conductive layer substantially fill the opening while simultaneously forming a second metal layer above the insulating layer.

A method of forming a vertical interconnect structure within a semiconductor device, the method comprising:

• forming an opening extending vertically downward through an insulating layer to an underlying portion of a first metal layer;
• depositing a coating layer of a conductive material in contact with a bottom and sidewalls of the opening;
• depositing a first conductive layer containing aluminum into the opening and in contact with the coating layer, wherein the first conductive layer partially fills the opening;
• and
• depositing a second conductive layer containing aluminum into the opening and in contact with the first conductive layer, wherein the second conductive layer substantially fills a remainder of the opening.

A method of forming a vertical interconnect structure within a semiconductor device, the method comprising:

• forming a portion of the semiconductor device, which includes a conductive contact to an active region;
• forming a first metal layer directly above and in contact with the portion of the semiconductor device, so that the first metal layer physically and electrically connects with the contact;
• forming an insulating layer above the first metal layer;
• forming an opening extending vertically downward through the insulating layer to an underlying portion of the first metal layer, wherein a length of the opening in a horizontal plane is sufficiently greater than a width of the opening in the horizontal plane so that the opening has a trench shape;
• and
• filling the opening with conductive material to form a conductive trench via, while simultaneously forming a second metal layer above the insulating layer.

A method of forming a vertical interconnect structure, comprising:

• forming a semiconductor substrate including at least a plurality of diffused regions;
• forming a first insulating layer over the plurality of diffused regions;
• forming a plurality of contact holes, wherein at least one of the plurality exposes at least one of the plurality of diffused regions;
• forming a first patterned conductive material layer electrically connecting at least one of the plurality of contact holes;
• forming a second insulating layer over the first patterned conductive material layer;
• forming a plurality of via holes, wherein at least one of the plurality exposes at least one portion of the first patterned conductive material layer;
• filling at least some of the plurality of vias holes with an electrically conductive material;
• and
• forming at least a second patterned conductive material layer on the second insulating layer.