Method of forming metal line in semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsTae Kyung Kim, Jik Ho Cho
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Abstract
A method of forming a line a semiconductor device, including the steps of forming an interlayer insulating film on a semiconductor substrate in which predetermined structures are formed, forming a trench through which a predetermined region of the semiconductor substrate is exposed in the interlayer insulating film, sequentially forming a glue layer and a first barrier metal film on the entire surface including the trench, forming a second barrier metal film at the bottom of the trench, and forming a line within the trench.
Claims39
A method of forming a line in a semiconductor device, the method comprising:
- forming an interlayer insulating film on a semiconductor substrate in which predetermined structures are formed;
- forming a trench through which a predetermined region of the semiconductor substrate is exposed in the interlayer insulating film;
- sequentially forming a glue layer and a first barrier metal film on the entire surface including the trench;
- forming a second barrier metal film at the bottom of the trench;
- and
- forming a line within the trench.
A method of forming a line in a semiconductor device, the method comprising:
- forming an interlayer insulating film on a semiconductor substrate in which predetermined structures are formed;
- forming a trench through which a predetermined region of the semiconductor substrate is exposed in the interlayer insulating film;
- sequentially forming a glue layer and a first barrier metal film on the entire surface including the trench;
- forming a second barrier metal film at the bottom of the trench and on the first barrier metal film not in the trench;
- depositing a line material so that the trench is buried;
- and
- polishing the surface so that the interlayer insulating film is exposed, thereby forming a line within the trench.
A method of forming a line in a flash memory device, the method comprising:
- forming an interlayer insulating film on a semiconductor substrate in which a stack gate and spacers are formed;
- forming a trench through which a predetermined region of the semiconductor substrate is exposed in the interlayer insulating film;
- sequentially forming a glue layer and a first barrier metal film on the entire surface including the trench;
- forming a second barrier metal film at the bottom of the trench;
- and
- forming a line within the trench.
Dependencies are inferred from the claim text.