Semiconductor device having a through contact through a housing composition and method for producing the same

A method for producing a semiconductor device including a through contact extending through a housing composition of the semiconductor device to contact pads within the semiconductor device, the method comprising:

• consecutively removing layers of a selected thickness and selected length and width dimensions from the housing composition and beginning at a top side of the housing composition to form a contact hole extending through the housing composition from the top side of the housing composition to a contact pad disposed within the semiconductor device, wherein the width dimension of each removed layer is substantially constant while the length dimension is reduced as each consecutive layer is removed and as the contact hole increases in depth from the top side of the housing composition such that the contact hole that is formed has an asymmetrical funnel shape and includes at least two opposite inner wall sides that are oriented substantially perpendicular to the top side of the housing composition and at least one further inner wall side that is inclined as the further inner wall side extends from the top side of the housing composition to the contact pad such that the contact hole has an elongated cross-section at the top side of the housing composition and a cross-section in the region of the contact pad that is no greater than the areal extent of the contact pad;
• applying a seed layer of metal having a thickness of no greater than about 5 nanometers thick along the inclined inner wall side (12) of the contact hole (7),
• selectively reinforcing the seed layer to form a conductor track extending from the top side of the housing composition and over the further inner wall side to the contact pad.