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US 2006/0189116 A1Published application
Dual metal stud bumping for flip chip applications
AssigneeFairchild Semiconductor Corporation
InventorsRajeev Joshi, Consuelo Tangpuz, Margie Rios, Erwin Victor Cruz
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Abstract
A method for forming a stud bumped semiconductor die is disclosed. The method includes forming a ball at the tip of a coated wire passing through a hole in a capillary, where the coated wire has a core and an oxidation-resistant coating. The formed ball is pressed to the conductive region on the semiconductor die. The coated wire is cut, thereby leaving a conductive stud bump on the conductive region, where the conductive stud bump includes an inner conductive portion and an outer oxidation-resistant layer.
Claims14
A method comprising:
- (a) forming a ball at the tip of a coated wire passing through a hole in a capillary, wherein the coated wire comprises a core and an outer oxidation-resistant coating;
- (b) pressing the ball to a conductive region on a semiconductor die;
- and
- (c) cutting the coated wire, thereby leaving a conductive stud bump on the conductive region, wherein the conductive stud bump includes an inner conductive portion and an outer oxidation-resistant layer.
1 more element
-13. (canceled)
Dependencies are inferred from the claim text.