Wiring structure forming method and semiconductor device

A wiring structure forming method, comprising the steps of:

• forming an opening in an insulating film over a substrate;
• forming a base film over the insulating film in such a manner that the base film covers an inner wall surface of the opening by a sputtering method;
• and
• embedding a conductive material in the opening with the base film therebetween, wherein
• said step of forming the base film comprises:
• a first sputtering step under a condition of Vd/Ve>1;
• and
• a second sputtering step under a condition of Vd/Ve<1.4
• where Vd/Ve is a ratio of a deposition rate (Vd) of a material for the base film to an etching rate (Ve) thereof.

A wiring structure forming method, comprising the steps of:

• forming an opening in an insulating film over a substrate;
• forming a base film in such a manner that the base film covers only an inner wall surface of the opening and is not deposited over the insulating film other than that in the opening by a sputtering method;
• and
• embedding a conductive material in the opening with the base film therebetween.

A semiconductor device, comprising:

• a semiconductor substrate;
• an insulating film formed over said semiconductor substrate;
• a base film which covers only an inner wall surface of an opening formed in the insulating film;
• and
• a conductive material which is embedded in the opening with said base film therebetween, wherein said base film is a sputtered film covering the inner wall surface at a uniform film thickness.

A semiconductor device, wherein

• said semiconductor device is manufactured by various steps comprising the steps of:
• forming an opening in an insulating film over a substrate;
• forming a base film over the insulating film in such a manner that the base film covers an inner wall surface of the opening by a sputtering method;
• and
• embedding a conductive material in the opening with the base film therebetween, and
• said step of forming the base film comprises:
• a first sputtering step under a condition of Vd/Ve>1;
• and
• a second sputtering step under a condition of Vd/Ve<1.4
• where Vd/Ve is a ratio of a deposition rate (Vd) of a material for the base film to an etching rate (Ve) thereof.

A semiconductor device, wherein said semiconductor device is manufactured by various steps comprising the steps of:

• forming an opening in an insulating film over a substrate;
• forming a base film in such a manner that the base film covers only an inner wall surface of the opening and is not deposited over the insulating film other than that in the opening by a sputtering method;
• and
• embedding a conductive material in the opening with the base film therebetween.