Method of manufacturing semiconductor device and semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsMasaharu Seto, Hirokazu Ezawa
Life of this patent
Estimating the term…
Abstract
According to an embodiment of the present invention, a method of manufacturing a semiconductor device, comprising forming a conducting layer on a substrate; forming a resist mask having an opening in a prescribed position on the conducting layer; forming a first plated film in the opening by supplying an electric current to the conducting layer; increasing the interval between an inner side surface of the resist mask forming the opening and the first plated film by setting back the inner side surface; and forming a second plated film in the opening resulting from the setback of the inner side surface to cover the first plated film by supplying an electric current to the conducting layer.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a conducting layer on a substrate;
- forming a resist mask having an opening in a prescribed position on the conducting layer;
- forming a first plated film in the opening by supplying an electric current to the conducting layer;
- increasing the interval between an inner side surface of the resist mask forming the opening and the first plated film by-setting back the inner side surface;
- and
- forming a second plated film in the opening resulting from the setback of the inner side surface to cover the first plated film by supplying an electric current to the conducting layer.
A semiconductor device, comprising:
- a substrate;
- a conducting layer which is formed on the substrate;
- a first plated film which is formed on the conducting layer;
- and
- a second plated film which is formed on the conducting layer to cover the top and side surfaces of the first plated film.
Dependencies are inferred from the claim text.