Method of making CMOS devices on strained silicon on glass

A method of making CMOS devices on strained silicon on glass, comprising:

• preparing a glass substrate, including forming a strained silicon layer on the glass substrate by forming a layer of strained silicon on a silicon wafer and transferring the strained silicon layer to the glass substrate;
• forming a silicon oxide layer from the strained silicon layer by plasma oxidation;
• depositing a layer of doped polysilicon on the silicon oxide layer;
• forming a polysilicon gate;
• implanting ions to form a LDD structure;
• depositing and forming a spacer dielectric on the gate structure;
• implanting and activating ions to form source and drain structures;
• depositing a layer of metal film;
• annealing the layer of metal film to form salicide on the source, drain and gate structures;
• removing any unreacted metal film;
• depositing a layer of interlayer dielectric;
• and
• forming contact holes and metallizing.