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US 2006/0189107 A1Published application
Merged P-i-N Schottky structure
AssigneeSiliconix Technology C. V.
InventorsDavide Chiola, Kohji Andoh, Silvestro Fimiani
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Abstract
Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.
Claims9
A method for manufacturing a semiconductor device comprising:
- forming a plurality of stripes of one conductivity type in a semiconductive body of another conductivity, each said stripe extending to a first depth;
- spacing each said stripe of one conductivity type from another stripe of said one conductivity type a distance selected so that said device exhibits the same reverse avalanche energy absorption characteristics as a Fast Recovery Epitaxial Diode having a diffusion of a depth higher than said first depth;
- and
- forming a schottky contact layer over said semiconductive body, wherein said schottky contact layer is in contact with said plurality of spaced stripes of said one conductivity and regions of said another conductivity type disposed between said spaced stripes of said one conductivity.
1 more element
Dependencies are inferred from the claim text.