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US 2006/0189104 A1Published application
Method for forming a quantum dot pattern
AssigneeHon Hai Precision Industry Co., Ltd.
InventorSHUO-TING YAN
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Abstract
A method of forming at least one quantum dot is disclosed. A substrate having a single crystal structure is provided. An insulating layer is formed on the substrate. At least one opening is defined in the insulating layer, thereby exposing at least one corresponding portion of the substrate. At least one quantum dot having a crystal structure is grown, each quantum dot being epitaxially grown on a corresponding exposed portion of the substrate. The insulating layer is removed, thereby obtaining the at least one quantum dot on the substrate.
Claims9
A method of forming at least one quantum dot, comprising the steps of:
- providing a substrate having a single crystal structure;
- forming an insulating layer on the substrate;
- defining at least one opening in the insulating layer, thereby exposing at least one corresponding portion of the substrate;
- growing at least one quantum dot having a crystal structure, each quantum dot being epitaxially grown on a corresponding exposed portion of the substrate;
- and
- removing the insulating layer, thereby obtaining the at least one quantum dot on the substrate.
3 more elements
Dependencies are inferred from the claim text.