Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device comprising:

• forming a metal film on a first substrate;
• forming an oxide film on the metal film;
• forming at least a transistor including a nitride film containing hydrogen on the oxide film;
• forming an insulating film on the transistor;
• bonding a second substrate to the insulating film;
• separating the transistor and the insulating film from the first substrate by heating to diffuse hydrogen contained in the nitride film and reducing metal oxide formed at a surface boundary between the metal film and the oxide film.

A method for manufacturing a semiconductor device comprising:

• forming a metal film on a first substrate;
• forming an oxide film on the metal film;
• forming at least a transistor including a semiconductor film containing hydrogen on the oxide film;
• forming an insulating film on the transistor;
• heating to diffuse hydrogen contained in the semiconductor film and reducing metal oxide formed at a surface boundary between the metal film and the oxide film,
• bonding a second substrate to the insulating film;
• separating the transistor and the insulating film from the first substrate.

A method for manufacturing a semiconductor device comprising:

• forming a metal film on a first substrate;
• forming an oxide film on the metal film;
• forming at least a transistor including a nitride film containing hydrogen on the oxide film;
• forming an insulating film on the transistor;
• heating to diffuse hydrogen contained in the nitride film and reducing metal oxide formed at a surface boundary between the metal film and the oxide film,
• bonding a second substrate to the insulating film;
• separating the transistor and the insulating film from the first substrate.