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US 2006/0189096 A1Published application
Creation of high mobility channels in thin-body SOI devices
AssigneeIntel Corporation
InventorsBrian Doyle, Brian Roberds
Life of this patent
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Abstract
A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of relaxed film=and a second layer of strained film. The SOI wafer has a stack structure of a second base substrate and a layer of oxidized film. The SOI wafer is attached to the wafer and is heated at a first temperature. This causes a silicon dioxide (SiO2) dangling bond to form on the second base substrate of the SOI wafer, transferring the strained film from one wafer to the other.
Claims7
1-19. (canceled)
A method comprising:
- forming a relaxed layer on a silicon layer;
- forming a strained layer on the relaxed layer;
- creating an embrittled region in one of the relaxed and strained layers;
- and
- transferring the strained layer to top of a wafer by heat treatment, the wafer having a base substrate and an oxidized film.
2 more elements
Dependencies are inferred from the claim text.