Memory element and memory device
AssigneeSony Corporation
InventorsTetsuya Mizuguchi, Katsuhisa Aratani, Akihiro Maesaka, Akira Kouchiyama
Life of this patent
Estimating the term…
Abstract
A memory element in which data recording and data readout can be performed stably without difficulties and which can be manufactured with a comparatively simplified method is provided. The memory element 10 includes a memory layer 4 and an ion source layer 3 positioned between the first electrode 2 and the second electrode 6, in which the ion source layer 3 contains any of elements selected from Cu, Ag, Zn and any of elements selected from Te, S, Se, and the ion source layer further contains boron (or rare-earth elements and silicon).
Claims6
A memory element comprising:
- a memory layer and an ion source layer positioned between first and second electrodes,
- wherein said ion source layer contains any of elements selected from Cu, Ag, Zn and any of elements selected from Te, S, Se, and
- said ion source layer further contains boron.
A memory element comprising:
- a memory layer and an ion source layer positioned between first and second electrodes,
- wherein said ion source layer contains any of elements selected from Cu, Ag, Zn and any of elements selected from Te, S, Se, and
- said ion source layer further contains rare-earth elements and silicon.
A memory device comprising:
- a memory element including a memory layer and an ion source layer positioned between first and second electrodes, in which said ion source layer contains any of elements selected from Cu, Ag, Zn and any of elements selected from Te, S, Se, and said ion source layer further contains boron,
- wiring connected to a first electrode side and
- wiring connected to a second electrode side,
- wherein a number of said memory elements are disposed.
A memory device comprising:
- a memory element including a memory layer and an ion source layer positioned between first and second electrodes, in which said ion source layer contains any of elements selected from Cu, Ag, Zn and any of elements selected from Te, S, Se, and said ion source layer further contains rare-earth elements and silicon,
- wiring connected to a first electrode side and
- wiring connected to a second electrode side,
- wherein a number of said memory elements are disposed.
Dependencies are inferred from the claim text.